Imprint templates and methods for forming imprinted patterns using the same

ABSTRACT

Methods for forming imprinted patterns using an imprint template. The imprint template may include at least an imprint portion and a photomask portion. The imprint portion may include imprinting patterns. The imprinting patterns may be transferred into a first imprint shot region of a resist layer. The photomask portion may include light blocking patterns. The light blocking patterns may provide a light permeation area corresponding to a boundary region defining a second imprint shot region of the resist layer.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a division of U.S. patent application Ser. No.15/789,019 filed on Oct. 20, 2017, which claims benefits of priority ofKorean Patent Application No. 10-2017-0049404 filed on Apr. 17, 2017.The disclosure of each of the foregoing application is incorporatedherein by reference in its entirety.

BACKGROUND 1. Technical Field

Various embodiments of the present disclosure relate to a nanoimprintlithography (NIL) technique and, more particularly, to imprint templatesused in the NIL technique and methods for forming imprinted patternsusing the imprint templates.

2. Related Art

In the semiconductor industry, a lot of effort has been focused ondeveloping technologies for transferring fine pattern images onto awafer in order to realize integrated circuits with a high integrationdensity. A NIL technique has been evaluated as an attractive lithographytechnique which is efficiently usable for fabrication of nanostructuresat a low cost. According to a typical NIL technique, a template in whichthe nanostructures are carved may be put on a resist layer and thetemplate may be pressed toward the resist layer to transfer thenanostructures into the resist layer. The resist layer may be formed byspin-coating or dispensing a resist material onto a wafer or asubstrate. The template may be fabricated using a stamp or a mold.

When the template having carved nanostructures is pressed toward theresist layer to transfer the pattern shapes of the carved nanostructuresinto the resist layer, portions of the resist layer may extrude or flowout of the template to contaminate sidewalls of the template or toprovide an undesired surface profile of a residual resist layer that is,the patterned or carved resist layer, after the carved nanostructures ofthe template are transferred into the resist layer. As a result, theresidual resist layer may have a non-uniform surface profile which maycause a process failure. Alternatively, the residual resist layer mayhave protruded structures at a surface of the residual resist layer. Thenon-uniform surface profile of the residual resist layer or theprotruded structures of the residual resist layer may lead to abnormalpatterns.

SUMMARY

According to an embodiment, an imprint template includes an imprintportion and a photomask portion. The imprint portion includes imprintingpatterns which are transferred into a first imprint shot region of aresist layer. The photomask portion includes light blocking patternsthat provide a light permeation area corresponding to a boundary regiondefining a second imprint shot region of the resist layer.

According to another embodiment, there is provided a method for formingimprinted patterns. The method includes loading an imprint template on aresist layer. The imprint template is provided to include an imprintportion in which imprinting patterns are disposed and a photomaskportion in which light blocking patterns are disposed to provide a lightpermeation area between the light blocking patterns. A first imprintstep is performed to embed the imprinting patterns into a first imprintshot region of the resist layer. An exposure light is irradiated ontothe imprint template to cure the first imprint shot region with theexposure light passing through the imprint portion of the imprinttemplate. While the exposure light is irradiated onto the imprinttemplate, a boundary region of the resist layer defining a secondimprint shot region of the resist layer is cured by the exposure lightpassing through the light permeation area to form an extrusion barrierpattern.

According to yet another embodiment, there is provided a method forforming imprinted patterns. The method includes forming a resist layeron a wafer, providing an imprint template including an imprint portionin which imprinting patterns are disposed and a photomask portion inwhich light blocking patterns are disposed to provide a light permeationarea between the light blocking patterns, aligning the imprint templatewith the wafer so that the light permeation area vertically overlapswith an edge portion of the wafer and the imprinting patterns arelocated outside of the wafer without vertically overlapping with thewafer, curing a boundary region of the resist layer with an exposurelight passing through the light permeation area to form a firstextrusion barrier pattern defining a first imprint shot region in theresist layer, realigning the imprint template with the wafer so that theimprinting patterns are located over the first imprint shot region,performing a first imprint step to embed the imprinting patterns intothe first imprint shot region, and irradiating the exposure light ontothe imprint template to cure the first imprint shot region with theexposure light passing through the imprint portion of the imprinttemplate and to cure another boundary region of the resist layerdefining a second imprint shot region of the resist layer with theexposure light passing through the light permeation area to form asecond extrusion barrier pattern.

According to still another embodiment, there is provided a method forforming imprinted patterns. The method includes forming a resist layeron a wafer, irradiating an exposure light onto a boundary region of theresist layer using a digital micro-mirror device (DMD) to form a firstextrusion barrier pattern defining a first imprint shot region in theresist layer, providing an imprint template including an imprint portionin which imprinting patterns are disposed and a photomask portion inwhich light blocking patterns are disposed to provide a light permeationarea between the light blocking patterns, aligning the imprint templatewith the wafer so that the imprinting patterns are located over thefirst imprint shot region, performing a first imprint step to embed theimprinting patterns into the first imprint shot region, and irradiatingthe exposure light onto the imprint template to cure the first imprintshot region with the exposure light passing through the imprint portionof the imprint template and to cure another boundary region of theresist layer defining a second imprint shot region of the resist layerwith the exposure light passing through the light permeation area toform a second extrusion barrier pattern.

BRIEF DESCRIPTION OF THE DRAWINGS

Various embodiments of the present disclosure will become more apparentin view of the attached drawings and accompanying detailed description,in which:

FIG. 1 is a cross-sectional view illustrating an imprint template inaccordance with an embodiment;

FIG. 2 is a plane view illustrating an imprint template shown in FIG. 1;

FIGS. 3 to 5 illustrate a method for forming imprinted patterns inaccordance with an embodiment;

FIG. 6 is a cross-sectional view illustrating an extrusion barrierpattern formed by a method for forming imprinted patterns in accordancewith an embodiment;

FIGS. 7 to 14 illustrate a method for forming imprinted patterns inaccordance with an embodiment; and

FIGS. 15 and 16 illustrate a method for forming imprinted patterns inaccordance with an embodiment.

DETAILED DESCRIPTION OF THE EMBODIMENTS

The terms used herein may correspond to words selected in considerationof their functions in the embodiments, and the meanings of the terms maybe construed to be different according to ordinary skill in the art towhich the embodiments belong. If defined in detail, the terms may beconstrued according to the definitions. Unless otherwise defined, theterms used herein have the same meaning as commonly understood by one ofordinary skill in the art to which the embodiments belong.

It will be understood that although the terms first, second, third etc.may be used herein to describe various elements, these elements shouldnot be limited by these terms. These terms are only used to distinguishone element from another element, but not used to define only theelement itself or to mean a particular sequence. Thus, a first elementin some embodiments could be termed a second element in otherembodiments without departing from the teachings of the inventiveconcept.

It will also be understood that when an element or layer is referred toas being “on,” “over,” “below,” “under,” or “outside” another element orlayer, the element or layer may be in direct contact with the otherelement or layer, or intervening elements or layers may be present.Other words used to describe the relationship between elements or layersshould be interpreted in a like fashion (e.g., “between” versus“directly between” or “adjacent” versus “directly adjacent”).

The following embodiments may be applied to realization of integratedcircuits such as dynamic random access memory (DRAM) devices, phasechange random access memory (PcRAM) devices or resistive random accessmemory (ReRAM) devices. Moreover, the following embodiments may beapplied to realization of memory devices such as static random accessmemory (SRAM) devices, flash memory devices, magnetic random accessmemory (MRAM) devices or ferroelectric random access memory (FeRAM)devices. Furthermore, the following embodiments may be applied torealization of logic devices in which logic circuits are integrated.

Same reference numerals refer to same elements throughout thespecification. Even though a reference numeral is not mentioned ordescribed with reference to a drawing, the reference numeral may bementioned or described with reference to another drawing. In addition,even though a reference numeral is not shown in a drawing, it may bementioned or described with reference to another drawing.

FIG. 1 is a cross-sectional view illustrating an imprint template 100according to an embodiment, and FIG. 2 is a plane view illustrating theimprint template 100 of FIG. 1. FIG. 1 is a cross-sectional view takenalong a line A-A′ of FIG. 2.

Referring to FIG. 1, the imprint template 100 may include an imprintportion 102 in which imprinting patterns 121 are disposed. The imprinttemplate 100 may further include a photomask portion 104 surrounding theimprint portion 102. That is, the photomask portion 104 may be locatedat edge portions of the imprint template 100, and the imprint portion102 may be located at a central portion of the imprint template 100. Theimprint portion 102 and the photomask portion 104 may constitute theimprint template 100.

The imprint template 100 may include a template body 101, the imprintingpatterns 121 and light blocking patterns 150 disposed on the templatebody 101. The template body 101 may be comprised of a substantiallytransparent material. For example, the template body 101 may be formedto include a glass material such as a quartz material. The template body101 may include a base portion 130 having a substantially flat shape anda mesa portion 110 protruding from a portion of the base portion 130toward a resist layer 200.

The mesa portion 110 may protrude from a portion of a front side surface131 of the base portion 130, and the base portion 130 may have abackside surface 133 opposite to the mesa portion 110. The mesa portion110 may be disposed in the imprint portion 102 of the imprint template100. The mesa portion 110 may have a patterned surface 111 facing theresist layer 200. The patterned surface 111 of the mesa portion 110 mayhave a concave and convex surface profile to provide the imprintingpatterns 121. The light blocking patterns 150 may be disposed on thefront side surface 131 of the base portion 130 in the photomask portion104, and a space between the light blocking patterns 150 may correspondto a light permeation area 153. There may be a level difference betweenthe front side surface 131 of the base portion 130 and the patternedsurface 111 of the mesa portion 110. The front side surface 131 of thebase portion 130 may be connected to the patterned surface 111 of themesa portion 110 by a sidewall 112 of the mesa portion 110.

A shape of the imprinting patterns 121 defined by the patterned surface111 of the mesa portion 110 may be transferred into the resist layer200.

Referring to FIG. 2, a field region 120 comprised of the imprintingpatterns 121 may have a tetragonal shape or a square shape surrounded bythe light blocking patterns 150. The field region 120 may be dividedinto a plurality of sub-field regions 120S. Each of the plurality ofsub-field regions 120S may include some of the imprinting patterns 121.The sub-field regions 120S may be disposed to be spaced apart from eachother by a certain distance at the patterned surface 111 of the mesaportion 110.

Referring to FIGS. 1 and 2, first light blocking patterns 152 of thelight blocking patterns 150 may be disposed to be adjacent to the fieldregion 120, and each of the first light blocking patterns 152 may have atile-shaped feature. The first light blocking patterns 152 may bedisposed to surround the field region 120, and each of the first lightblocking patterns 152 may have substantially the same planar shape asthe field region 120. That is, each of the first light blocking patterns152 may have substantially the same planar area as the field region 120.Accordingly, the number of the first light blocking patterns 152surrounding the field region 120 may be eight. The first light blockingpatterns 152 may be disposed to be spaced apart from each other by acertain distance. A space between adjacent two patterns of the firstlight blocking patterns 152 may correspond to the light permeation area153.

A second light blocking pattern 151 of the light blocking patterns 150may be disposed to surround the first light blocking patterns 152 and tohave a frame-shaped feature in a plane view. That is, the second lightblocking pattern 151 may be disposed on edges of the base portion 130 ofthe imprint template 100. Accordingly, the second light blocking pattern151 may have a rectangular closed loop shape to surround the first lightblocking patterns 152. The second light blocking pattern 151 may bespaced apart from the first light blocking patterns 152 by a certaindistance. A space between the second light blocking pattern 151 andadjacent one pattern of the first light blocking patterns 152 maycorrespond to the light permeation area 153.

Referring again to FIG. 2, the light permeation area 153 may be definedas a space between the first and second light blocking patterns 152 and151 as well as between the field region 120 and the first light blockingpatterns 152. Thus, the light permeation area 153 may have a latticeshape that is, a grid shape. Each of the first light blocking patterns152 may have substantially the same shape and area as the field region120. That is, if the resist layer 200 is exposed using the imprinttemplate 100 as a photomask to define a plurality of non-exposed regionscorresponding to the first light blocking patterns 152 in the resistlayer 200 and the imprint template 100 is shifted by a pitch size of thefirst light blocking patterns 152, the field region 120 of the shiftedimprint template 100 may be aligned to completely overlap with any oneof the non-exposed regions. Accordingly, the light permeation area 153may correspond to a boundary area for defining a plurality of shotregions in which the field region 120 is sequentially stepped andimprinted during a nanoimprint lithography (NIL) process.

Referring again to FIG. 1, the field region 120 of the imprint template100 may correspond to any one of imprint shot regions 210 of the resistlayer 200. That is, the imprinting patterns 121 of the field region 120of the imprint template 100 may be sequentially and repeatedly imprintedinto the imprint shot regions 210 of the resist layer 200 during the NILprocess. The imprint shot regions 210 of the resist layer 200 may bedefined by a boundary region 230. In such a case, the boundary region230 may be set by the light permeation area 153 defined in the photomaskportion 104 of the imprint template 100.

When the field region 120 of the imprint template 100 is located tovertically overlap with a first imprint shot region 211 among theimprint shot regions 210 of the resist layer 200, a second imprint shotregion 212 of the imprint shot regions 210, which is adjacent to thefirst imprint shot region 211, may be separated from the first imprintshot region 211 by a first boundary region 231 of the boundary region230. A fourth imprint shot region 214 of the imprint shot regions 210,which is adjacent to a side of the first imprint shot region 211opposite to the second imprint shot region 212, may be separated fromthe first imprint shot region 211 by a third boundary region 234 of theboundary region 230. The first imprint shot region 211 may be defined bythe first and third boundary regions 231 and 234. In addition, a thirdimprint shot region 213 located a side of the second imprint shot region212 opposite to the first imprint shot region 211 may be separated fromthe second imprint shot region 212 by a second boundary region 232 ofthe boundary region 230. A fifth imprint shot region 215 located a sideof the fourth imprint shot region 214 opposite to the first imprint shotregion 211 may be separated from the fourth imprint shot region 214 by afourth boundary region 235 of the boundary region 230.

In the event that the field region 120 of the imprint template 100 isaligned to vertically overlap with the first imprint shot region 211 ofthe resist layer 200, a portion of the light permeation area 153 in thephotomask portion 104 of the imprint template 100 may be aligned withthe second boundary region 232 in the resist layer 200. In such a case,if an exposure light is irradiated onto the resist layer 200 through thelight permeation area 153 of the imprint template 100, the exposurelight may selectively reach the second boundary region 232 and thesecond boundary region 232 may be cured by the exposure light tofunction as an extrusion barrier pattern.

While the imprinting patterns 121 in the imprint portion 102 of theimprint template 100 are imprinted into the first imprint shot region211 of the resist layer 200 after the imprinting patterns 121 areimprinted into the fourth imprint shot region 214 of the resist layer200, the photomask portion 104 of the imprint template 100 may be usedto selectively expose the second boundary region 232 of the resist layer200 to the exposure light to cure the second boundary region 232. Sincethe second boundary region 232 selectively cured by exposure light actsas an extrusion barrier pattern, the cured second boundary region 232may prevent the resist material in the second imprint shot region 212from extruding toward the third imprint shot region 213 when theimprinting patterns 121 of the imprint template 100 are imprinted intothe second imprint shot region 212 of the resist layer 200. Thephotomask portion 104 may be used to cure the boundary region 230 beforethe imprinting patterns 121 of the imprint template 100 are imprintedinto the imprint shot regions 210 adjacent to the boundary region 230.While the boundary region 230 of the resist layer 200 is cured, thelight blocking patterns 150 may cover the imprint shot regions 210 ofthe resist layer 200 to prevent the imprint shot regions 210 from beingexposed to the exposure light.

The light blocking patterns 150 may be disposed to block the exposurelight, for example, an ultraviolet (UV) ray passing through the baseportion 130 of the imprint template 100. Thus, no UV ray may beirradiated onto the imprint shot regions 210 corresponding to the lightblocking patterns 150 while the imprinting patterns 121 of the imprinttemplate 100 are imprinted into the imprint shot regions 210 of theresist layer 200. Accordingly, while the imprinting patterns 121 areimprinted into the first imprint shot region 211 of the resist layer 200after the imprinting patterns 121 are imprinted into the fourth imprintshot region 214 of the resist layer 200, the second boundary region 232may be cured in advance whereas the second imprint shot region 212 isnot cured.

The imprint template 100 may be configured to have a hybrid structureincluding the imprint portion 102 in which the imprinting patterns 121to be transferred into each of the imprint shot regions 210 are disposedand the photomask portion 104 in which the light blocking patterns 150defining the light permeation area 153 corresponding to the boundaryregion 230 are disposed.

The resist layer 200 may be formed of a material that is able to becured by the exposure light, for example, an UV ray. The resist layer200 may be formed of a polymer material including a photosensitizercomponent chemically reacting on the exposure light for example, an UVray, and a resin component. The resist layer 200 may be formed of amaterial which is known as an imprintable medium material in a field ofan NIL technique. The resist layer 200 may be formed by spin-coating aresist material on a substrate or a wafer. Alternatively, the resistlayer 200 may be formed using an ink-jetting technique or adrop-dispensing technique.

FIGS. 3 to 5 illustrate a method for forming imprinted patternsaccording to an embodiment, and FIG. 6 is a cross-sectional viewillustrating an extrusion barrier pattern formed by a method for formingimprinted patterns according to an embodiment.

FIG. 3 illustrates a step of aligning the imprint template 100 with theresist layer 200. Referring to FIG. 3, the imprint template 100 may moveon the resist layer 200 so that the field region 120 of the imprinttemplate 100 is aligned with the first imprint shot region 211 of theresist layer 200. Although the first imprint shot region 211 alignedwith the field region 120 is a non-cured region, first and thirdboundary regions, corresponding to the regions 231 and 234 of FIG. 1,defining the first imprint shot region 211 may correspond to first andthird extrusion barrier patterns 231C and 234C which are cured in aprevious imprint shot step for forming imprinted patterns 221 in afourth imprint shot region 214C adjacent to the first imprint shotregion 211. In such a case, even though the first and third boundaryregions 231 and 234 correspond to the first and third extrusion barrierpatterns 231C and 234C, the second boundary region 232 may still have anon-cured state.

The third boundary region (234 of FIG. 1) may also be cured in anotherprevious imprint shot step for forming the imprinted patterns 221 in afifth imprint shot region 215C, which is adjacent to a side of thefourth imprint shot region 214C opposite to the first imprint shotregion 211, to provide the third extrusion barrier pattern 234C. Thatis, while the imprinted patterns 221 are formed in the fifth imprintshot region 215C, the third boundary region (234 of FIG. 1) may also becured to form the third extrusion barrier pattern 234C.

In the previous imprint shot step for forming the imprinted patterns 221in the fourth imprint shot region 214C, the first boundary region (231of FIG. 1) may be cured to form the first extrusion barrier pattern231C.

As described above, after the first and third extrusion barrier patterns231C and 234C are formed, the field region 120 of the imprint template100 may be aligned with the first imprint shot region 211 of the resistlayer 200. In such a case, a portion of the light permeation area 153 ofthe photomask portion 104 may be aligned with the second boundary region232 for defining the second imprint shot region 212.

Referring to FIG. 4, the imprint template 100 may move downwardly sothat the imprinting patterns 121 are in contact with a surface of thefirst imprint shot region 211 of the resist layer 200, and the imprinttemplate 100 may be pressed down to embed the imprinting patterns 121into the first imprint shot region 211. While the imprinting patterns121 are embedded into the first imprint shot region 211 of the resistlayer 200, the exposure light may be irradiated onto the backsidesurface 133 of the imprint template 100 to perform an exposure step. Theexposure light passing through the imprint portion 102 of the imprinttemplate 100 may be irradiated onto the first imprint shot region 211 ofthe resist layer 200 to cure the first imprint shot region 211. As aresult, the first imprint shot region 211 may be cured to form a curedfirst imprint shot region 211C that provides the imprinted patterns 221having the same surface profile as the imprinting patterns 121.

While the cured first imprint shot region 211C is formed to provide theimprinted patterns 221, the exposure light passing through the lightpermeation area 153 of the photomask portion 104 may cure the secondboundary region (232 of FIG. 1) to form a second extrusion barrierpattern 232C. As illustrated in a plane view of FIG. 5, the secondextrusion barrier pattern 232C may be formed to define the secondimprint shot region 212 in which the imprinting patterns 121 of theimprint template 100 are imprinted during the next imprint shot step.The second extrusion barrier pattern 232C may be formed to have a“⊏”-shaped form in a plane view to surround the second imprint shotregion 212 to which the next imprint shot step is applied. The secondextrusion barrier pattern 232C may be formed during the imprint shotstep for forming the first imprint shot region 211C. That is, anextrusion barrier pattern 230C including the first to third extrusionbarrier patterns 231C, 232C and 234C may be formed during the imprintshot steps even without any additional process step.

Referring to FIG. 6, when the imprinting patterns 121 of the imprinttemplate 100 are imprinted into the first imprint shot region 211, aportion of the resist material in the first imprint shot region 211 mayextrude out of the first imprint shot region 211. However, according tothe present embodiment, since the third extrusion barrier pattern 234Cis disposed to surround the first imprint shot region 211, the thirdextrusion barrier pattern 234C may act as a dam to prevent the resistmaterial in the first imprint shot region 211 from extruding out of thefirst imprint shot region 211 while the imprinting patterns 121 of theimprint template 100 are imprinted into the first imprint shot region211. If the resist material in the first imprint shot region 211extrudes or flows out of the first imprint shot region 211, theuniformity of a thickness of the resist layer 200 including theimprinted patterns 221 may be degraded and an undesired extrudedstructure may be formed on a surface of the resist layer 200. Thedegradation of the thickness uniformity of the resist layer 200 or theundesired extruded structure on the surface of the resist layer 200 maycause formation of abnormal patterns. However, according to the presentembodiment, the third extrusion barrier pattern 234C may prevent aportion 211E of the resist material in the first imprint shot region 211from extruding out of the first imprint shot region 211 while theimprinting patterns 121 of the imprint template 100 are imprinted intothe first imprint shot region 211. In addition, according to the presentembodiment, the sidewall 112 of the mesa portion 110 may not becontaminated by the resist material in the first imprint shot region 211during the imprint shot step for the first imprint shot region 211 dueto the presence of the third extrusion barrier pattern 234C.

FIGS. 7 to 14 illustrate a method for forming imprinted patternsaccording to another embodiment.

FIG. 7 is a cross-sectional view illustrating a first exposure shot stepapplied to an edge portion 300E of a wafer 300, and FIG. 8 is a planeview illustrating the first exposure shot step. Referring to FIGS. 7 and8, the resist layer 200 may be formed on the wafer 300. The imprinttemplate 100 may then be aligned with the wafer 300 so that a portion ofthe edge portion 300E of the wafer 300 overlaps with a portion of theimprint template 100, and an exposure light may be irradiated onto theresist layer 200 through the light permeation area 153 of the imprinttemplate 100 to perform the first exposure shot step. As illustrated inFIG. 8, the imprint template 100 may be aligned with the wafer 300 sothat some of the light blocking patterns 150 of the imprint template 100overlaps with the wafer 300 and the field region 120 of the imprinttemplate 100 does not overlap with the wafer 300. A first boundaryregion of the resist layer 200 may be selectively exposed and cured bythe exposure light passing through the light permeation area 153 of theimprint template 100 to form a first extrusion barrier pattern 230-1.

FIG. 9 is a cross-sectional view illustrating a second exposure shotstep applied to the wafer 300, and FIG. 10 is a plane view illustratingthe second exposure shot step. Referring to FIGS. 9 and 10, the imprinttemplate 100 may be shifted toward an inner portion of the wafer 300 sothat the field region 120 of the imprint template 100 is partiallyaligned with a first imprint shot region 210-1 of the resist layer 200,which is defined by the first extrusion barrier pattern 230-1. Theimprint template 100 may be shifted in an X-axis direction to performthe second exposure shot step. After the second exposure shot step isperformed, the imprint template 100 may be sequentially stepped in theX-axis direction to perform a plurality of exposure shot steps in asingle row of the wafer 300. After the plurality of exposure shot stepsare performed along the single row of the wafer 300, the imprinttemplate 100 may be shifted toward a Y-axis direction and the imprinttemplate 100 may be sequentially stepped in the X-axis direction toperform a plurality of exposure shot steps in another single row of thewafer 300. A plurality of exposure shot steps may be applied to anentire portion of the wafer 300 using the above stepping manner. In someembodiments, the wafer 300 instead of the imprint template 100 may besifted to apply the exposure shot steps to an entire portion of thewafer 300.

The first imprint shot region 210-1 may correspond to a region betweenan edge of the wafer 300 and the first extrusion barrier pattern 230-1.Thus, only a portion of the field region 120 of the imprint template 100may overlap with the first imprint shot region 210-1. The imprinttemplate 100 may move downwardly so that the imprinting patterns 121 ofthe imprint template 100 are in contact with a surface of the firstimprint shot region 210-1 of the resist layer 200, and the imprinttemplate 100 may be pressed down to embed the imprinting patterns 121into the first imprint shot region 210-1. While the imprinting patterns121 are embedded into the first imprint shot region 210-1 of the resistlayer 200, the second exposure shot step may be performed to cure thefirst imprint shot region 210-1. Accordingly, the cured first imprintshot region 210-1 may be hardened to have the same surface profile asthe imprinting patterns 121.

During the second exposure shot step, the exposure light passing throughthe light permeation area 153 of the imprint template 100 may beirradiated onto a second boundary region of the resist layer 200 to forma second extrusion barrier pattern 230-2. The second extrusion barrierpattern 230-2 may be formed to define a second imprint shot region 210-2adjacent to the cured first imprint shot region 210-1. During the secondexposure shot step, one of the light blocking patterns 150 of theimprint template 100 may cover the second imprint shot region 210-2.Thus, the second imprint shot region 210-2 may not be exposed to theexposure light during the second exposure shot step. That is, the secondimprint shot region 210-2 may correspond to a non-cured region.

FIG. 11 is a cross-sectional view illustrating a third exposure shotstep applied to the wafer 300, and FIG. 12 is a plane view illustratingthe third exposure shot step. Referring to FIGS. 11 and 12, the imprinttemplate 100 may be shifted toward an inner portion of the wafer 300 inthe X-axis direction so that the field region 120 of the imprinttemplate 100 is aligned with the second imprint shot region 210-2 of theresist layer 200, which is defined by the second extrusion barrierpattern 230-2. The second imprint shot region 210-2 may be defined as aregion between the first and second extrusion barrier patterns 230-1 and230-2. The imprint template 100 may move downwardly so that theimprinting patterns 121 of the imprint template 100 are in contact witha surface of the second imprint shot region 210-2 of the resist layer200, and the imprint template 100 may be pressed down to embed theimprinting patterns 121 into the second imprint shot region 210-2. Whilethe imprinting patterns 121 are embedded into the second imprint shotregion 210-2 of the resist layer 200, the third exposure shot step maybe performed to cure the second imprint shot region 210-2. Accordingly,the cured second imprint shot region 210-2 may be hardened to have thesame surface profile as the imprinting patterns 121.

During the third exposure shot step, the exposure light passing throughthe light permeation area 153 of the imprint template 100 may beirradiated onto a third boundary region of the resist layer 200 to forma third extrusion barrier pattern 230-3. The third extrusion barrierpattern 230-3 may be formed to define a third imprint shot region 210-3adjacent to the cured second imprint shot region 210-2. During the thirdexposure shot step, one of the light blocking patterns 150 of theimprint template 100 may cover the third imprint shot region 210-3.Thus, the third imprint shot region 210-3 may not be exposed to theexposure light during the third exposure shot step. That is, the thirdimprint shot region 210-3 may correspond to a non-cured region.

FIG. 13 is a cross-sectional view illustrating a fourth exposure shotstep applied to the wafer 300, and FIG. 14 is a plane view illustratingthe fourth exposure shot step. Referring to FIGS. 13 and 14, the imprinttemplate 100 may be shifted towards an inner portion of the wafer 300 inthe X-axis direction so that the field region 120 of the imprinttemplate 100 is aligned with the third imprint shot region 210-3 of theresist layer 200, which is defined by the third extrusion barrierpattern 230-3. The third imprint shot region 210-3 may be defined as aregion between the second and third extrusion barrier patterns 230-2 and230-3. The imprint template 100 may move downwardly so that theimprinting patterns 121 of the imprint template 100 are in contact witha surface of the third imprint shot region 210-3 of the resist layer200, and the imprint template 100 may be pressed down to embed theimprinting patterns 121 into the third imprint shot region 210-3. Whilethe imprinting patterns 121 are embedded into the third imprint shotregion 210-3 of the resist layer 200, the fourth exposure shot step maybe performed to cure the third imprint shot region 210-3. Accordingly,the cured third imprint shot region 210-3 may be hardened to have thesame surface profile as the imprinting patterns 121.

During the fourth exposure shot step, the exposure light passing throughthe light permeation area 153 of the imprint template 100 may beirradiated onto a fourth boundary region of the resist layer 200 to forma fourth extrusion barrier pattern 230-4. The fourth extrusion barrierpattern 230-4 may be formed to define a fourth imprint shot region 210-4adjacent to the cured third imprint shot region 210-3. During the fourthexposure shot step, one of the light blocking patterns 150 of theimprint template 100 may cover the fourth imprint shot region 210-4.Thus, the fourth imprint shot region 210-4 may not be exposed to theexposure light during the fourth exposure shot step. That is, the fourthimprint shot region 210-4 may correspond to a non-cured region.

A shape of the imprinting patterns 121 may be transferred into an entireportion of the resist layer 200 by repeatedly performing the imprintshot steps and the exposure shot steps which are described above.

FIGS. 15 and 16 are cross-sectional views illustrating a method forforming imprinted patterns according to yet another embodiment.

FIG. 15 is a cross-sectional view illustrating a first exposure shotstep applied to an edge portion of a wafer 1300. Referring to FIG. 15,an exposure light may be directly irradiated onto a first boundaryregion of a resist layer 1200 formed on a wafer 1300 without using anyimprint template to perform the first exposure shot step. As a result ofthe first exposure shot step, a first extrusion barrier pattern 1230-1may be formed in the resist layer 1200. The first extrusion barrierpattern 1230-1 among a plurality of extrusion barrier patterns 1230 maybe formed to be adjacent to an edge of the wafer 1300. A first imprintshot region 1210-1 may be defined as a region between the firstextrusion barrier pattern 1230-1 and an edge of the wafer 1300.

The first exposure shot step may be performed by a direct exposure stepusing a digital micro-mirror device (DMD) 1400. For example, a primaryexposure light 1411 generated by a light source 1410 may travel toward amirror surface 1401 of the DMD 1400, and the DMD 1400 may reflect theprimary exposure light 1411 to generate a secondary exposure light 1413which is irradiated onto the first boundary region of the resist layer1200. A travelling path of the secondary exposure light 1413 may becontrolled by an array of micro-mirrors of the DMD 1400 so that thesecondary exposure light 1413 is irradiated only onto the first boundaryregion of the resist layer 1200. The DMD 1400 may perform a masklessexposure step using an array of the micro-mirrors. The DMD 1400 maycontrol an array of the micro-mirrors to accurately adjust a position ofthe resist layer 1200, onto which the secondary exposure light 1413 isirradiated. Accordingly, a location of the first extrusion barrierpattern 1230-1 formed in the resist layer 1200 may be accuratelycontrolled.

A second exposure shot step may be applied to the first imprint shotregion 1210-1 which is defined by the first extrusion barrier pattern1230-1. As illustrated in FIG. 16, the imprint template 100 may then beloaded on the wafer 1300 so that the field region 120 of the imprinttemplate 100 is aligned with the first imprint shot region 1210-1 of theresist layer 1200. The imprint template 100 may move downwardly so thatthe imprinting patterns 121 of the imprint template 100 are in contactwith a surface of the first imprint shot region 1210-1 of the resistlayer 1200, and the imprint template 100 may be pressed down to embedthe imprinting patterns 121 into the first imprint shot region 1210-1.While the imprinting patterns 121 are embedded into the first imprintshot region 1210-1 of the resist layer 1200, the second exposure shotstep may be performed to cure the first imprint shot region 1210-1.Accordingly, the cured first imprint shot region 1210-1 may be hardenedto have the same surface profile as the imprinting patterns 121.

During the second exposure shot step, the exposure light passing throughthe passing through the light permeation area 153 of the imprinttemplate 100 may be irradiated onto a second boundary region of theresist layer 1200 to form a second extrusion barrier pattern 1230-2. Thesecond extrusion barrier pattern 1230-2 may be formed to define a secondimprint shot region 1210-2 adjacent to the cured first imprint shotregion 1210-1. During the second exposure shot step, one the lightblocking patterns 150 of the imprint template 100 may cover the secondimprint shot region 1210-2. Thus, the second imprint shot region 1210-2may not be exposed to the exposure light during the second exposure shotstep. That is, the second imprint shot region 1210-2 may correspond to anon-cured region. Subsequently, additional exposure shot steps may besequentially performed using the same manner as described with referenceto FIGS. 10 to 14.

Although the embodiments of the present disclosure have been describedwith reference to the accompanying drawings, the embodiments describedabove are for illustrative purposes only and are not intended to limitthe scope of the present disclosure. Accordingly, those skilled in theart will appreciate that various modifications, additions andsubstitutions are possible, without departing from the scope and spiritof the present disclosure and the accompanying claims.

What is claimed is:
 1. An imprint template comprising: an imprintportion including imprinting patterns which are transferred into a firstimprint shot region of a resist layer; and a photomask portion includinglight blocking patterns that provide a light permeation areacorresponding to a boundary region defining a second imprint shot regionof the resist layer.
 2. The imprint template of claim 1, wherein thelight blocking patterns are disposed on a base portion comprised of atransparent material; and wherein the imprinting patterns are providedby a patterned surface of a mesa portion protruding from a portion ofthe base portion.
 3. The imprint template of claim 1, wherein the lightblocking patterns includes: a plurality of first light blocking patternsdisposed to surround a field region comprised of the imprintingpatterns; and a second light blocking pattern disposed to surround anarray of the plurality of first light blocking patterns to have aframe-shaped feature in a plane view.
 4. The imprint template of claim3, wherein any one of the first light blocking patterns is located tooverlap with the second imprint shot region of the resist layer if thefield region is aligned with the first imprint shot region.
 5. Theimprint template of claim 3, wherein the light permeation area iscomprised of a space between adjacent two of the first light blockingpatterns as well as a space between adjacent two of the first and thesecond blocking patterns to have a grid shape in a plane view.
 6. Theimprint template of claim 3, wherein each of the first light blockingpatterns has substantially the same planar shape as the field region. 7.The imprint template of claim 3, wherein if the field region is alignedwith the first imprint shot region, a portion of the light permeationarea is located to correspond to the boundary region defining the secondimprint shot region as a next imprint shot region adjacent to the firstimprint shot region.